(China (Mainland))
Product Summary
The S29GL064M10TFIR7 is a 32 megabit, 3.0 volt-only flash memory device, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on DQ15–DQ0; byte mode data appears on DQ7–DQ0. The S29GL064M10TFIR7 is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers. The S29GL064M10TFIR7 is available with an access time of 55, 60, 70, or 90 ns and is offered in a 48-pin TSOP package. Standard control pins—chip enable (CE#), write enable (WE#), and output enable (OE#)—control normal read and write operations, and avoid bus contention issues. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.
Parametrics
S29GL064M10TFIR7 absolute maximum ratings: (1)Storage Temperature Plastic Packages: –65°C to +150°C; (2)Ambient Temperature with Power Applied: –65°C to +125°C; (3)Voltage with Respect to Ground VCC (Note 1): –0.5 V to +4.0 V; (4)A9, OE#, and RESET# (Note 2): –0.5 V to +12.5 V; (5)WP#/ACC: –0.5 V to +10.5 V; (6)All other pins (Note 1): –0.5 V to VCC +0.5 V; (7)Output Short Circuit Current (Note 3): 200 mA.
Features
S29GL064M10TFIR7 features: (1)Supports Common Flash Memory Interface (CFI); (2)Erase Suspend/Erase Resume: Suspends erase operations to read data from, or program data to, a sector that is not being erased, then resumes the erase operation.; (3)Unlock Bypass Program command: Reduces overall programming time when issuing multiple program command sequences; (4)Cycling Endurance: 1 million cycles per sector typical; (5)Data Retention: 20 years typical; (6)Ready/Busy# output (RY/BY#): Hardware method for detecting program or erase cycle completion; (7)Hardware reset pin (RESET#): Hardware method of resetting the internal state machine to the read mode.
Diagrams
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