(China (Mainland))
Product Summary
The UM5K1N is a 2.5v drive nch+nch mos fet.
Parametrics
UM5K1N absolute maximum ratings: (1)Drain－source voltage VDSS: 30V; (2)Gate－source voltage VGSS: ±20V; (3)Channel temperature Tch: 150℃; (4)Storage temperature Tch: －55 to +150℃; (5)Total power dissipation PD*2: 150mW / TOTAL; (6)Total power dissipation PD*2: 120mW / ELEMENT.
Features
UM5K1N features: (1) Two 2SK3018 transistors in a single UMT package; (2) Mounting cost and area can be cut in half; (3) Low on－resistance; (4) Low voltage drive (2.5V) makes this device ideal for portable equipment; (5) Drive circuits can be simple.
Diagrams
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 UM5K1N |
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Data Sheet |
Negotiable |
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UM5K1NTR |
ROHM Semiconductor |
MOSFET 2N-CH 30V .1A SOT-363 |
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