AT45DB041D

Product Summary

The AT45DB041D is a 2.5V or 2.7V, serial-interface Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. The AT45DB041D supports RapidS serial interface for applications requiring very high speed operations. RapidS serial interface is SPI compatible for frequencies up to 66 MHz. Its 4,325,376 bits of memory are organized as 2,048 pages of 256 bytes or 264 bytes each. In addition to the main memory, the AT45DB041D also contains two SRAM buffers of 256/264 bytes each. The buffers allow the receiving of data while a page in the main Memory is being reprogrammed, as well as writing a continuous data stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-contained three step read-modify-write operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash uses a RapidS serial interface to sequentially access its data. The simple sequential access dramatically reduces active pin count, facilitates hardware layout,increases system reliability, minimizes switching noise, and reduces package size. The device is optimized for use in many commercial and industrial applications where high-density, low-pin count, low-voltage and low-power are essential.

Parametrics

AT45DB041D absolute maximum ratings: (1)Storage Temperature : -65°C to +150°C; (2)All Input Voltages (including NC Pins)with Respect to Ground : -0.6V to +6.25V; (3)All Output Voltages with Respect to Ground : -0.6V to VCC + 0.6V; (4)Temperature under Bias : -55°C to +125°C.

Features

AT45DB041D features: (1)Single 2.5V or 2.7V to 3.6V Supply; (2)RapidS® Serial Interface: 66 MHz Maximum Clock Frequency: SPI Compatible Modes 0 and 3; (3)User Configurable Page Size: 256 Bytes per Page, 264 Bytes per Page; (4)Page Program Operation: Intelligent Programming Operation, 2,048 Pages (256/264 Bytes/Page)Main Memory; (5)Flexible Erase Options: Page Erase (256 Bytes), Block Erase (2 Kbytes), Sector Erase (64 Kbytes), Chip Erase (4 Mbits); (6)Two SRAM Data Buffers (256/264 Bytes): Allows Receiving of Data while Reprogramming the Flash Array; (7)Continuous Read Capability through Entire Array: Ideal for Code Shadowing Applications; (8)Low-power Dissipation: 7 mA Active Read Current Typical, 25 μA Standby Current Typical, 5 μA Deep Power-down Typical; (9)Hardware and Software Data Protection Features: Individual Sector.

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