Product Summary
The MRF1946A is an npn silicon power transistor.
Parametrics
MRF1946A absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 16 Vdc; (2)Collector–Base Voltage VCBO: 36 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 8.0 Adc; (5)Total Device Dissipation @ TA = 25°C, Derate above 25°C PD: 100Watts, 0.57W/℃; (6)Storage Temperature Range Tstg: –65 to +150 ℃; (7)Junction Temperature TJ: 200℃.
Features
MRF1946A features: (1)High Common Emitter Power Gain; (2)Diffused Emitter Resistor Ballasting; (3)Characterized to 220 MHz; (4)Load Mismatch at High Line and Overdrive Conditions; (5)Specified 12.5 V, 175 MHz Performance: Output Power = 30 Watts, Power Gain = 10 dB, Efficiency = 60%.
Diagrams
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