(China (Mainland))
Product Summary
The MRF6VP3450HR a rf power field effect transistor. The MRF6VP3450HR is designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of the MRF6VP3450HR make them ideal for large－signal, common－source amplifier applications in 50 volt analog or digital television transmitter equipment.
Parametrics
MRF6VP3450HR absolute maximum ratings: (1)Drain－Source Voltage VDSS: －0.5, +110 Vdc; (2)Gate－Source Voltage VGS: －6.0, +10 Vdc; (3)Storage Temperature Range Tstg: － 65 to +150 °C; (4)Case Operating Temperature TC: 150 °C; (5)Operating Junction Temperature (1,2) TJ: 225 °C.
Features
MRF6VP3450HR features: (1) Characterized with Series Equivalent Large－Signal Impedance Parameters; (2) Internally Input Matched for Ease of Use; (3) Qualified Up to a Maximum of 50 VDD Operation; (4) Integrated ESD Protection; (5) Designed for Push－Pull Operation; (6) Greater Negative Gate－Source Voltage Range for Improved Class C Operation; (7) RoHS Compliant; (8) In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Diagrams
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 MRF6VP3450HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power VHV6 450W 860MHZ NI1230H |
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MRF6VP3450HR6 |
Freescale Semiconductor |
Transistors RF MOSFET Power VHV6 450W 860MHZ NI1230H |
Data Sheet |
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